IN Samsung announced the start of mass production of the new eUFS 3.1 solid state flash memory. The capacity of the chips is 512 GB (there are also versions for 256 and 128 GB), these modules are planned to be used in smartphones, tablets and so on.
Separately, we note that the peak sequential write speed for such a memory version is 1200 MB / s, and the read speed is up to 2100 MB / s. For comparison, for eUFS 3.1, the figures are 410 MB / s and 540 MB / s, respectively.
In read accesses with random access, the speed is declared at the level of 100,000 IOPS, and write – 70,000 IOPS.
The memory will appear in a wide assortment this year and will become the main one for the company’s flagship smartphones. In the future, the appearance of eUFS 3.1 is also possible in models of other manufacturers, as well as in gaming mobile solutions.
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