Company Samsung Electronics introduced the module DDR5 volume 512 GB based on technology High-k metal gate (HKMG). DDR5 has more than double the performance of DDR4, delivering bandwidth up to 7200 megabits per second (Mbps).
The new module is suitable for the most computationally and bandwidth-intensive tasks related to supercomputers, artificial intelligence, machine learning and data analysis.
“By adopting HKMG’s DRAM manufacturing process, we can offer our customers high-performance and energy-efficient memory for computers in medical research, financial markets, autonomous driving, smart cities and more,” commented Young-Soo Sung. Soo Sohn, Vice President of the DRAM Planning and Support Team at Samsung Electronics.
“As the amount of data that needs to be moved, stored and processed grows exponentially, the move to DDR5 comes at a critical juncture for cloud data centers, networking and edge deployments. Intel engineers have worked closely with memory leaders like Samsung to create fast, energy-efficient DDR5 memory with performance optimizations that are compatible with our upcoming Sapphire Rapids Intel Xeon Scalable processors. ” Director of Memory and I / O Technology at Intel.
Samsung’s DDR5 will use the advanced HKMG technology traditionally found in logic semiconductors and was first used in Samsung GDDR6 memory in 2018. As DRAM structures shrink, the insulating layer becomes thinner, resulting in more current leakage.
By replacing the insulator with HKMG material, Samsung’s DDR5 reduces leakage and is able to provide better performance. The new memory will also use about 13% less power, making it especially suitable for data centers where energy efficiency is a factor.
Using vertical interconnect (TSV) technology, Samsung DDR5 memory combines eight layers of 16GB DRAM chips for a maximum storage capacity of 512GB. TSV technology was first introduced to DRAM in 2014, when Samsung introduced server modules up to 256GB.
More information can be found on the official site…
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